K. Matsuzaki, N. Nemoto, E. Nakamura, T. Akutsu, S. Matsuda, K. Yajima, H. Sasaki, M. Komaru, T. Katoh, T. Kashiwa, T. Asano, K. Mizuguchi
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Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs
The effects of Co-60 /spl gamma/-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 10/sup 7/ rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode.
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