K. A. Mohamad, A. Alias, I. Saad, B. Gosh, K. Uesugi, H. Fukuda
{"title":"[6,6]-苯基- c61丁酸甲酯(PCBM)凝聚纳米结构对有机薄膜晶体管器件性能的影响","authors":"K. A. Mohamad, A. Alias, I. Saad, B. Gosh, K. Uesugi, H. Fukuda","doi":"10.1109/RSM.2013.6706502","DOIUrl":null,"url":null,"abstract":"The influence of [6,6]-phenyl C<sub>61</sub>-butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance of pentacene-based organic thin-film transistors (OTFTs) were reported. The presence of PCBM layers on a SiO<sub>2</sub> gate dielectric resulted in a good electrical characteristics of pentacene-based OTFTs, including a relatively high mobility (μ = 0.95-2.2 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>), low threshold voltages (V<sub>th</sub> = -1.1 - -5.4 V), a high on/off current ratio (I<sub>on</sub>/I<sub>off</sub> = 10<sup>4</sup>), and a high value of subthreshold slope (SS = 6.5 V/decade). The surface topography studies reveal that the PCBM nanostructure could favor the reduction of grain boundaries, which resulted in a better transistor performance of pentacene-based OTFTs. The influence of PCBM on the molecular microstructure of pentacene thin films elucidates a reasonable explanation for higher performance on OTFTs.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of [6,6]-Phenyl-C61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors\",\"authors\":\"K. A. Mohamad, A. Alias, I. Saad, B. Gosh, K. Uesugi, H. Fukuda\",\"doi\":\"10.1109/RSM.2013.6706502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of [6,6]-phenyl C<sub>61</sub>-butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance of pentacene-based organic thin-film transistors (OTFTs) were reported. The presence of PCBM layers on a SiO<sub>2</sub> gate dielectric resulted in a good electrical characteristics of pentacene-based OTFTs, including a relatively high mobility (μ = 0.95-2.2 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>), low threshold voltages (V<sub>th</sub> = -1.1 - -5.4 V), a high on/off current ratio (I<sub>on</sub>/I<sub>off</sub> = 10<sup>4</sup>), and a high value of subthreshold slope (SS = 6.5 V/decade). The surface topography studies reveal that the PCBM nanostructure could favor the reduction of grain boundaries, which resulted in a better transistor performance of pentacene-based OTFTs. The influence of PCBM on the molecular microstructure of pentacene thin films elucidates a reasonable explanation for higher performance on OTFTs.\",\"PeriodicalId\":346255,\"journal\":{\"name\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2013.6706502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of [6,6]-Phenyl-C61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors
The influence of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance of pentacene-based organic thin-film transistors (OTFTs) were reported. The presence of PCBM layers on a SiO2 gate dielectric resulted in a good electrical characteristics of pentacene-based OTFTs, including a relatively high mobility (μ = 0.95-2.2 cm2 V-1 s-1), low threshold voltages (Vth = -1.1 - -5.4 V), a high on/off current ratio (Ion/Ioff = 104), and a high value of subthreshold slope (SS = 6.5 V/decade). The surface topography studies reveal that the PCBM nanostructure could favor the reduction of grain boundaries, which resulted in a better transistor performance of pentacene-based OTFTs. The influence of PCBM on the molecular microstructure of pentacene thin films elucidates a reasonable explanation for higher performance on OTFTs.
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