{"title":"基于130纳米SiGe技术的宽带Balun-LNA","authors":"K. Murasov, S. Zavyalov, A. Kosykh, Z. B. Sadykov","doi":"10.1109/FAREASTCON.2018.8602728","DOIUrl":null,"url":null,"abstract":"A circuit of balun-LNA designed in 130 nm SiGe BiCMOS technology is presented. The balun-LNA has been designed using common base (CB) and common emitter (CE) stages based on heterojunction bipolar transistor (HBT). The balun-LNA circuit are used for amplification of radio frequency (RF) input signal and creation differential output signals using for double-balanced mixer (DBM). The obtained results of modeling of balun-LNA over 0.8-18 GHz frequency band are as follow: gain is more than 14 dB; NF is better than 5.0 dB, phase error of differential output signal is no more than 27 degree; VSWR is better than 1.7; required area size is $1.73 \\times 0.73\\ \\mathbf{mm}^{2}$.","PeriodicalId":177690,"journal":{"name":"2018 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The Wideband Balun-LNA in 130 nm SiGe Technology\",\"authors\":\"K. Murasov, S. Zavyalov, A. Kosykh, Z. B. Sadykov\",\"doi\":\"10.1109/FAREASTCON.2018.8602728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A circuit of balun-LNA designed in 130 nm SiGe BiCMOS technology is presented. The balun-LNA has been designed using common base (CB) and common emitter (CE) stages based on heterojunction bipolar transistor (HBT). The balun-LNA circuit are used for amplification of radio frequency (RF) input signal and creation differential output signals using for double-balanced mixer (DBM). The obtained results of modeling of balun-LNA over 0.8-18 GHz frequency band are as follow: gain is more than 14 dB; NF is better than 5.0 dB, phase error of differential output signal is no more than 27 degree; VSWR is better than 1.7; required area size is $1.73 \\\\times 0.73\\\\ \\\\mathbf{mm}^{2}$.\",\"PeriodicalId\":177690,\"journal\":{\"name\":\"2018 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FAREASTCON.2018.8602728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FAREASTCON.2018.8602728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A circuit of balun-LNA designed in 130 nm SiGe BiCMOS technology is presented. The balun-LNA has been designed using common base (CB) and common emitter (CE) stages based on heterojunction bipolar transistor (HBT). The balun-LNA circuit are used for amplification of radio frequency (RF) input signal and creation differential output signals using for double-balanced mixer (DBM). The obtained results of modeling of balun-LNA over 0.8-18 GHz frequency band are as follow: gain is more than 14 dB; NF is better than 5.0 dB, phase error of differential output signal is no more than 27 degree; VSWR is better than 1.7; required area size is $1.73 \times 0.73\ \mathbf{mm}^{2}$.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
