锗finfet的功函数和温度研究

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126462

R. Das, S. Baishya

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引用次数: 1

摘要

本文研究了栅极材料的功函数和温度这两个重要参数对器件性能的影响。对锗基FinFET器件进行了研究。工作装置在高导通电流(ION)、小漏电流(IOFF)、高(ION/IOFF)值等方面具有良好的电流可驱动性，对短通道效应(SCEs)具有良好的控制能力。最有趣的是，环境温度的亚阈值摆幅值低于60 mV/dec。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of work function and temperature of germanium FinFETs

In this paper, we study the effects of two important parameters such as work function of gate material and the temperature, on behavior of FinFET device. The investigation is carried out on Germanium based FinFET device. Working device shows improve current drivability in terms of high on current (ION), less leakage current (IOFF), high value of (ION/IOFF), and have good control on short channel effects (SCEs). Most interestingly, a sub-60 mV/dec of Subthreshold Swing value is found for ambient temperature.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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