GMR and magnetodynamics of MnIr spin valves depending on growth order of FM and AFM layers

The influence of spin valve layers on its main properties was investigated. Giant magnetoresistance and domain structures of two types of spin valves, Si/5 nm Ta/3 nm Co/2.5 nm Cu/3 nm Co/ 10 nm Ir/sub 20/Mn/sub 80//5 nm Ta top spin valve (TSV) and Si/5 nm Ta/3 nm/10 nm Ir/sub 20/Mn/sub 80// Co/2.5 nm Cu/3 nm Co/5 nm Ta bottom spin valve (BSV), were studied experimentally. The samples were fabricated by dc magnetron sputter deposition on Si substrates. The magnetic properties (magnetic anisotropy, magnetization reversal, magnetic structure) and magnetoresistance of the spin valves were measured using vibrating sample magnetometer and four-point probe respectively.