500mhz, 68%效率,全片上数字控制降压稳压器在22nm三栅极CMOS

H. Krishnamurthy, V. Vaidya, Pavan Kumar, G. Matthew, Sheldon Weng, Bharani Thiruvengadam, W. Proefrock, K. Ravichandran, V. De
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引用次数: 56

摘要

提出了一种采用22nm三栅极CMOS实现的全片上、数字控制、500MHz开关、250mA额定输出降压稳压器(VR)。该硅的峰值效率为68%,消耗面积为0.6mm2(无输出去耦),功率密度约为410 mW/mm2。本文还演示了一个带宽为43MHz的控制器;迄今为止报道的最高数字控制器,导致输出电压斜坡率高达10V/μsec。
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A 500 MHz, 68% efficient, fully on-die digitally controlled buck Voltage Regulator on 22nm Tri-Gate CMOS
A fully on-die, digitally controlled, 500MHz switching, 250mA rated output buck Voltage Regulator (VR) implemented in 22nm Tri-Gate CMOS is presented. The silicon measured a peak efficiency of 68% and consumed an area of 0.6mm2 (without output decoupling) with a power density of about 410 mW/mm2. The paper also demonstrates a controller bandwidth of 43MHz; the highest reported to date for any digital controller, resulting in output voltage ramp rates as high as 10V/μsec.
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