{"title":"一种用于高压ESD保护的高保持电压改性ldmos -可控硅","authors":"Wenqiang Song, Zhiwei Liu, J. Liou","doi":"10.1109/ISNE.2019.8896592","DOIUrl":null,"url":null,"abstract":"A modified lateral DMOS-SCR with high holding voltage for electrostatic discharge (ESD) protection applications has been proposed in this paper. The proposed MLDMOS-SCR possesses a lower trigger voltage as well as a higher holding voltage, which is very suitable for 18V/20V ESD applications. The operation mechanism of MLDMOS-SCR device is discussed in detail, and the effect of floating P+ region on the MLDMOS-SCR’s I-V characteristics is analyzed by TCAD simulation as well.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Modified LDMOS-SCR with High Holding Voltage for high voltage ESD Protection\",\"authors\":\"Wenqiang Song, Zhiwei Liu, J. Liou\",\"doi\":\"10.1109/ISNE.2019.8896592\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A modified lateral DMOS-SCR with high holding voltage for electrostatic discharge (ESD) protection applications has been proposed in this paper. The proposed MLDMOS-SCR possesses a lower trigger voltage as well as a higher holding voltage, which is very suitable for 18V/20V ESD applications. The operation mechanism of MLDMOS-SCR device is discussed in detail, and the effect of floating P+ region on the MLDMOS-SCR’s I-V characteristics is analyzed by TCAD simulation as well.\",\"PeriodicalId\":405565,\"journal\":{\"name\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2019.8896592\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Modified LDMOS-SCR with High Holding Voltage for high voltage ESD Protection
A modified lateral DMOS-SCR with high holding voltage for electrostatic discharge (ESD) protection applications has been proposed in this paper. The proposed MLDMOS-SCR possesses a lower trigger voltage as well as a higher holding voltage, which is very suitable for 18V/20V ESD applications. The operation mechanism of MLDMOS-SCR device is discussed in detail, and the effect of floating P+ region on the MLDMOS-SCR’s I-V characteristics is analyzed by TCAD simulation as well.
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