G. Dang, R. Mehandru, B. Luo, F. Ren, W. Hobson, J. Lopata, M. Tayahi, S. Chu, S. Pearton, W. Chang, H. Shen
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Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers
Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.
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