在NAND闪存ssd上采用级联存储节点的b树

Bo-Kyeong Kim, Chang-Jun Yeo, Dong-Ho Lee
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引用次数: 0

摘要

NAND闪存SSD由于其访问速度快、功耗低而被广泛应用于存储设备。它继承了一些独特的特性,比如没有就地更新,因为它由NAND闪存阵列组成。在闪存ssd上实现b树时,由于在同一节点上进行密集更新,会导致性能下降。在本文中,我们提出了一个在NAND闪存ssd上使用级联存储节点的b树,以减少密集的覆盖。我们的b树保留修改后的数据,以延迟写操作,并在批处理过程中对内存节点进行刷新。通过实验,我们证明了我们的b树与相关技术相比的优越性。
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A B-tree employing a cascade memory node on NAND flash SSDs
A NAND flash SSD has been widely used as a storage device because of its fast access speed and low power consumption. It inherits distinctive features such as no in-place update because it consists of NAND flash arrays. When implementing a B-tree on flash SSDs, the performance degradation occurs due to intensive updates in the same node. In this paper, we propose a B-tree employing a cascade memory node on NAND flash SSDs in order to reduce intensive overwrites. Our B-tree keeps the modified data so as to delay write operations and performs the flushing of memory node in batch process. Through the experiment, we show the superiority of our B-tree compared to related techniques.
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