{"title":"长波长量子阱红外探测器的等效电路模型","authors":"L. Li, Q. Weng, J. Wen, D. Xiong","doi":"10.1109/NUSOD.2012.6316508","DOIUrl":null,"url":null,"abstract":"We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An equivalent circuit model for the long-wavelength quantum well infrared detectors\",\"authors\":\"L. Li, Q. Weng, J. Wen, D. Xiong\",\"doi\":\"10.1109/NUSOD.2012.6316508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.\",\"PeriodicalId\":337826,\"journal\":{\"name\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2012.6316508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2012.6316508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An equivalent circuit model for the long-wavelength quantum well infrared detectors
We present an equivalent circuit model for AlGaAs/GaAs long wavelength quantum well infrared photodetectors (LW-QWIPs). Bias dependence of the dark current and photocurrent is described with the aid of analogue circuit modelling technique in TINA software. This model can be integrated with the readout circuit for the whole device circuit optimization further. The temperature dependence of dark current has also been incorporated into this circuit model. The designed parameters of the LW-QWIPs can be fed into this model as user-defined inputs to simulate the detector performance. The obtained results agree well with the experimental measurements.