{"title":"具有垂直PIN二极管结构的94ghz单片开关","authors":"J. Putnam, M. Fukuda, P. Staecker, Y. Yun","doi":"10.1109/GAAS.1994.636996","DOIUrl":null,"url":null,"abstract":"This paper presents the design, fabrication, and performance of a 94 GHz monolithic PIN diode SPDT switch. The switch uses a vertical PIN diode structure to achieve insertion loss of 1.0 dB and isolation greater than 30 dB at 94 GHz, The circuits were fabricated on semi-insulating GaAs wafers with MOCVD grown p+, i, and n+ layers. An AlGaAs layer was used as an etch stop in the fabrication of the backside via hole. Measurements were made in a fixture containing transitions from WR-10 waveguide to quartz microstrip and from the quartz microstrip to the MMIC chip.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A 94 GHz monolithic switch with a vertical PIN diode structure\",\"authors\":\"J. Putnam, M. Fukuda, P. Staecker, Y. Yun\",\"doi\":\"10.1109/GAAS.1994.636996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design, fabrication, and performance of a 94 GHz monolithic PIN diode SPDT switch. The switch uses a vertical PIN diode structure to achieve insertion loss of 1.0 dB and isolation greater than 30 dB at 94 GHz, The circuits were fabricated on semi-insulating GaAs wafers with MOCVD grown p+, i, and n+ layers. An AlGaAs layer was used as an etch stop in the fabrication of the backside via hole. Measurements were made in a fixture containing transitions from WR-10 waveguide to quartz microstrip and from the quartz microstrip to the MMIC chip.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 94 GHz monolithic switch with a vertical PIN diode structure
This paper presents the design, fabrication, and performance of a 94 GHz monolithic PIN diode SPDT switch. The switch uses a vertical PIN diode structure to achieve insertion loss of 1.0 dB and isolation greater than 30 dB at 94 GHz, The circuits were fabricated on semi-insulating GaAs wafers with MOCVD grown p+, i, and n+ layers. An AlGaAs layer was used as an etch stop in the fabrication of the backside via hole. Measurements were made in a fixture containing transitions from WR-10 waveguide to quartz microstrip and from the quartz microstrip to the MMIC chip.
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