用于生物医学近红外充电的WuRx前端和带天线的IF Gm-C带通滤波器芯片设计

Jhin-Fang Huang, W. Lai, Wang-Tyng Lay
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引用次数: 3

摘要

采用台积电0.18 μm CMOS工艺,成功实现了用于专用生物医学系统的1 v 5.8 GHz CMOS前端。该系统内置的近红外激光驱动(NIRLD)可能是一种很有前途的无线电源和相位唤醒接收器技术,利用直接有源射频检测来实现生物医学纳米器件的节能。该原型包括一个输入匹配低噪声放大器(LNA)、一个无源平衡器、一个下变频吉尔伯特混频器、一个gm增强科尔皮茨压控振荡器,然后是一个中频(IF) Gm-C带通滤波器。测量结果显示,输入回波损耗为27 dB,转换增益(CG)为29 dB,双频(DSB)噪声系数(NF)为4.95 dB,三阶截距(IIP3)为-24.4 dBm,调谐范围为5.17-5.98 GHz,相位噪声为-118.5 dBc/Hz, 1 MHz偏置为5.8 GHz, 1.0 V供电时功耗为27.6 mW。包括衬垫在内的整个芯片面积为2.1 (1.75 × 1.2) mm2。本文还采用宽带环型芯片天线进行外接,支持生物医学纳米器件的医疗应用。
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Chip design of WuRx front-end and IF Gm-C bandpass filter with antenna to near infrared charging for biomedical application
A 1-V 5.8 GHz CMOS front-end applying in dedicated biomedical systems has been successfully implemented by TSMC 0.18 μm CMOS process. This system has built in near-infrared laser-driven (NIRLD) might be a promising wireless electrical power source and phase in wake up receiver technology using direct active RF detection for biomedical nanodevices power saving. This proposed prototype includes an input matching low noise amplifier (LNA), a passive balun, a down-conversion Gilbert mixer, a gm-boosting Colpitts VCO, followed by an intermediate frequency (IF) Gm-C bandpass filter. The measured results achieve an input return loss of 27 dB, a conversion gain (CG) of 29 dB, a double-side band (DSB) noise figure (NF) of 4.95 dB, and a third-order intercept point (IIP3) of -24.4 dBm, a tuning range of 5.17-5.98 GHz, a phase noise of -118.5 dBc/Hz at 1 MHz offset from 5.8 GHz and a power consumption of 27.6 mW from 1.0 V supply. The overall chip area including pads is 2.1 (1.75 × 1.2) mm2. This paper also has external connect with a broadband loop-type chip antenna to support biomedical nanodevices healthcare application.
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