{"title":"一种1.2 V 300 μW二阶开关电容Δ∑调制器,采用超不完全沉淀,SNDR为73 dB, BW为300 kHz","authors":"Blazej Nowacki, N. Paulino, J. Goes","doi":"10.1109/ESSCIRC.2011.6044959","DOIUrl":null,"url":null,"abstract":"This paper presents a Δ∑ modulator (Δ∑M) circuit based on the implementation of discrete time filters using ultra incomplete settling (UIS). This approach allows building a Δ∑M using mostly dynamic elements thus reducing the power dissipation. A prototyped 2nd-order Δ∑M circuit, using this technique, was designed in a 130 nm CMOS technology; the measured results prove the validity of the concept. Measured results show that the Δ∑M achieves a peak SNDR of 72.8 dB, a peak SNR of 73.9 dB and a DR of 78.2 dB for a signal with a bandwidth (BW) of 300 kHz, while dissipating less than 300 μW from a 1.2V power supply voltage, resulting in a FOM of 139.3 fJ/conv.-step. As far as the authors have knowledge, this circuit represents the first prototyped switched-capacitor (SC) circuit based on UIS.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A 1.2 V 300 μW second-order switched-capacitor Δ∑ modulator using ultra incomplete settling with 73 dB SNDR and 300 kHz BW in 130 nm CMOS\",\"authors\":\"Blazej Nowacki, N. Paulino, J. Goes\",\"doi\":\"10.1109/ESSCIRC.2011.6044959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a Δ∑ modulator (Δ∑M) circuit based on the implementation of discrete time filters using ultra incomplete settling (UIS). This approach allows building a Δ∑M using mostly dynamic elements thus reducing the power dissipation. A prototyped 2nd-order Δ∑M circuit, using this technique, was designed in a 130 nm CMOS technology; the measured results prove the validity of the concept. Measured results show that the Δ∑M achieves a peak SNDR of 72.8 dB, a peak SNR of 73.9 dB and a DR of 78.2 dB for a signal with a bandwidth (BW) of 300 kHz, while dissipating less than 300 μW from a 1.2V power supply voltage, resulting in a FOM of 139.3 fJ/conv.-step. As far as the authors have knowledge, this circuit represents the first prototyped switched-capacitor (SC) circuit based on UIS.\",\"PeriodicalId\":239979,\"journal\":{\"name\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2011.6044959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6044959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2 V 300 μW second-order switched-capacitor Δ∑ modulator using ultra incomplete settling with 73 dB SNDR and 300 kHz BW in 130 nm CMOS
This paper presents a Δ∑ modulator (Δ∑M) circuit based on the implementation of discrete time filters using ultra incomplete settling (UIS). This approach allows building a Δ∑M using mostly dynamic elements thus reducing the power dissipation. A prototyped 2nd-order Δ∑M circuit, using this technique, was designed in a 130 nm CMOS technology; the measured results prove the validity of the concept. Measured results show that the Δ∑M achieves a peak SNDR of 72.8 dB, a peak SNR of 73.9 dB and a DR of 78.2 dB for a signal with a bandwidth (BW) of 300 kHz, while dissipating less than 300 μW from a 1.2V power supply voltage, resulting in a FOM of 139.3 fJ/conv.-step. As far as the authors have knowledge, this circuit represents the first prototyped switched-capacitor (SC) circuit based on UIS.