{"title":"利用提取的BSIM3v3 MOS参数进行弱反转电路的快速设计","authors":"L. de Carvalho Ferreira, T. Pimenta","doi":"10.1109/ICM.2004.1434212","DOIUrl":null,"url":null,"abstract":"This work describes a methodology for the extraction of DC parameters of MOS transistors on weak inversion from BSIM3v3 model. Once the optimum model for manual calculations has been defined, the parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of the transistors 'dimensions' calculations, by giving a determination index r/sup 3/ to the I vs V relation, which is 99.31% of the worst case, when compared to the BSIM3v3.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The use of extracted BSIM3v3 MOS parameters for fast design of circuits on weak inversion\",\"authors\":\"L. de Carvalho Ferreira, T. Pimenta\",\"doi\":\"10.1109/ICM.2004.1434212\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work describes a methodology for the extraction of DC parameters of MOS transistors on weak inversion from BSIM3v3 model. Once the optimum model for manual calculations has been defined, the parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of the transistors 'dimensions' calculations, by giving a determination index r/sup 3/ to the I vs V relation, which is 99.31% of the worst case, when compared to the BSIM3v3.\",\"PeriodicalId\":359193,\"journal\":{\"name\":\"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.\",\"volume\":\"2005 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2004.1434212\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2004.1434212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The use of extracted BSIM3v3 MOS parameters for fast design of circuits on weak inversion
This work describes a methodology for the extraction of DC parameters of MOS transistors on weak inversion from BSIM3v3 model. Once the optimum model for manual calculations has been defined, the parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of the transistors 'dimensions' calculations, by giving a determination index r/sup 3/ to the I vs V relation, which is 99.31% of the worst case, when compared to the BSIM3v3.
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