{"title":"通过比较实验和理论光学特性提取GaInP激光器的非辐射和载流子泄漏损耗","authors":"P. Smowton, G. Lewis, P. Blood, W. Chow, S. Koch","doi":"10.1109/ISLC.2000.882318","DOIUrl":null,"url":null,"abstract":"GaInP quantum well lasers are important for applications such as DVD and photodynamic therapy. The performance of these lasers remains limited by non-radiative and carrier-leakage losses and to design fully optimised devices it is necessary to describe these losses accurately. The paper provides a quantitative analysis of these non-radiative losses through detailed comparison of experimental gain and spontaneous emission spectra with a verified theoretical model. We find that, even in the absence of carrier leakage, there is a substantial contribution to the room temperature threshold current from non-radiative recombination within the wells themselves.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical properties\",\"authors\":\"P. Smowton, G. Lewis, P. Blood, W. Chow, S. Koch\",\"doi\":\"10.1109/ISLC.2000.882318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaInP quantum well lasers are important for applications such as DVD and photodynamic therapy. The performance of these lasers remains limited by non-radiative and carrier-leakage losses and to design fully optimised devices it is necessary to describe these losses accurately. The paper provides a quantitative analysis of these non-radiative losses through detailed comparison of experimental gain and spontaneous emission spectra with a verified theoretical model. We find that, even in the absence of carrier leakage, there is a substantial contribution to the room temperature threshold current from non-radiative recombination within the wells themselves.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical properties
GaInP quantum well lasers are important for applications such as DVD and photodynamic therapy. The performance of these lasers remains limited by non-radiative and carrier-leakage losses and to design fully optimised devices it is necessary to describe these losses accurately. The paper provides a quantitative analysis of these non-radiative losses through detailed comparison of experimental gain and spontaneous emission spectra with a verified theoretical model. We find that, even in the absence of carrier leakage, there is a substantial contribution to the room temperature threshold current from non-radiative recombination within the wells themselves.