用于纳米cmos锁相环设计优化的快速精确非多项式元建模

Oleg Garitselov, S. Mohanty, E. Kougianos
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引用次数: 18

摘要

在纳米级领域,由于高集成密度、技术限制和复杂的器件模型,电路的仿真、设计和优化时间显著增加。这就需要快速的设计空间探索技术,以满足由消费电子产品驱动的更短的上市时间。本文提出了一种基于神经网络的非多项式元模型(替代模型),在不牺牲精度的前提下缩短了复杂纳米cmos电路的设计优化时间。对物理设计感知神经网络进行训练,并将其用作元模型来预测锁相环电路的频率、锁定时间和功率。将神经网络的不同结构与针对相同电路特性生成的传统多项式函数进行了比较。实验结果表明,仅100个样本点就足以使神经网络对21个设计参数的电路输出进行预测,准确度在3%以内,比多项式元模型提高56%。生成的元模型用于使用蜂群算法对PLL进行优化。非多项式元模型(使用神经网络)在更短的优化时间内获得了比多项式元模型更精确的结果。
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Fast-Accurate Non-Polynomial Metamodeling for Nano-CMOS PLL Design Optimization
At the nanoscale domain, the simulation, design, and optimization time of the circuits have increased significantly due to high-integration density, increasing technology constraints, and complex device models. This necessitates fast design space exploration techniques to meet the shorter time to market driven by consumer electronics. This paper presents non-polynomial metamodels (surrogate models) using neural networks to reduce the design optimization time of complex nano-CMOS circuit with no sacrifice on accuracy. The physical design aware neural networks are trained and used as metamodels to predict frequency, locking time, and power of a PLL circuit. Different architectures for neural networks are compared with traditional polynomial functions that have been generated for the same circuit characteristics. Thorough experimental results show that only 100 sample points are sufficient for neural networks to predict the output of circuits with 21 design parameters within 3% accuracy, which improves the accuracy by 56% over polynomial metamodels. The generated metamodels are used to perform optimization of the PLL using a bee colony algorithm. It is observed that the non-polynomial (using neural networks) metamodels achieve more accurate results than polynomial metamodels in shorter optimization time.
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