{"title":"基于0.18μm数字CMOS的超宽带电阻反馈降噪放大器","authors":"Jianyun Hu, Yunliang Zhu, Hui Wu","doi":"10.1109/SMIC.2008.61","DOIUrl":null,"url":null,"abstract":"We present a wideband resistive feedback CMOS low-noise amplifier (LNA) with noise cancellation technique for ultra-wideband applications. The LNA achieves a 3-dB bandwidth of 0.7-6.5 GHz, power gain of 12.5 dB, and noise figure of 3.5-4.2 dB within the 3-dB bandwidth. The input matching is better than -11 dB from 0.7 to 12 GHz. The IIP3 is measured -5 dBm at 5 GHz. It is implemented in a 0.18 mum standard digital CMOS technology, occupies an area of 0.78 mmtimes0.68 mm, and consumes 11.1 mW from a 1.8 V supply.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"01 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"An Ultra-Wideband Resistive-Feedback Low-Noise Amplifier with Noise Cancellation in 0.18μm Digital CMOS\",\"authors\":\"Jianyun Hu, Yunliang Zhu, Hui Wu\",\"doi\":\"10.1109/SMIC.2008.61\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a wideband resistive feedback CMOS low-noise amplifier (LNA) with noise cancellation technique for ultra-wideband applications. The LNA achieves a 3-dB bandwidth of 0.7-6.5 GHz, power gain of 12.5 dB, and noise figure of 3.5-4.2 dB within the 3-dB bandwidth. The input matching is better than -11 dB from 0.7 to 12 GHz. The IIP3 is measured -5 dBm at 5 GHz. It is implemented in a 0.18 mum standard digital CMOS technology, occupies an area of 0.78 mmtimes0.68 mm, and consumes 11.1 mW from a 1.8 V supply.\",\"PeriodicalId\":350325,\"journal\":{\"name\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"01 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2008.61\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.61","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ultra-Wideband Resistive-Feedback Low-Noise Amplifier with Noise Cancellation in 0.18μm Digital CMOS
We present a wideband resistive feedback CMOS low-noise amplifier (LNA) with noise cancellation technique for ultra-wideband applications. The LNA achieves a 3-dB bandwidth of 0.7-6.5 GHz, power gain of 12.5 dB, and noise figure of 3.5-4.2 dB within the 3-dB bandwidth. The input matching is better than -11 dB from 0.7 to 12 GHz. The IIP3 is measured -5 dBm at 5 GHz. It is implemented in a 0.18 mum standard digital CMOS technology, occupies an area of 0.78 mmtimes0.68 mm, and consumes 11.1 mW from a 1.8 V supply.
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