具有双环控制路径的无电容快速瞬态响应LDO

2007 IEEE Asian Solid-State Circuits Conference Pub Date : 2007-11-01 DOI:10.1109/ASSCC.2007.4425706

Jiann-Jong Chen, F. Yang, Che-Min Kung, Bao-Peng Lai, Yuh-Shyan Hwang

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引用次数: 7

摘要

提出了一种具有双环控制路径的无电容快速瞬态响应低降稳压器(LDO)。该技术可以使其瞬态响应速度比传统控制环的ldo更快。特别是在没有片外电容的情况下，LDO的稳定时间性能非常好。电源电压为1.5 V，输出电压设计为1.2V。LDO的原型采用台积电0.35 μ m DPQM CMOS工艺制作。活动面积只有360mm乘以345mm。

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A capacitor-free fast-transient-response LDO with dual-loop controlled paths

A capacitor-free fast-transient-response low-dropout voltage regulator (LDO) with dual-loop controlled paths is presented in this paper. This technique can make the transient response to be faster than other LDOs with traditional controlled loop. Especially, the performance of settling time of proposed LDO is excellent without off-chip capacitors. With 1.5 V power supply voltage, the output voltage is designed as 1.2V. The prototype of the LDO is fabricated with TSMC 0.35-mum DPQM CMOS processes. The active area is only 360 mum times 345 mum.

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2007 IEEE Asian Solid-State Circuits Conference

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