Rakesh Bhavsar, Mohit Swadia, M. Vinodkumar, C. Limbachiya
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引用次数: 0
摘要
等离子体生成F原子的主要原料气体是cf4、sf6和nf3。蚀刻过程是通过cf4的解离电子附着产生F原子和通过电子激发和电离使cf4分子解离来确定的。因此,需要估计电子分子过程的激发和电离截面。原料气自由基(CFx等)在各向异性腐蚀中起着重要的作用。此外,限制全氟化合物和全球变暖潜势的排放也刺激了原料气体的变化。因此,电子冲击研究包括各种截面的计算和阴离子形成和共振的研究是主要的兴趣领域。在这项工作中,我们报告了在广泛的冲击能量范围(0.1 eV - 5000 eV)内等离子体原料气体和氟化合物的各种电子冲击总横截面、共振和目标特性。在15 eV以下,我们采用分子r矩阵方法1,采用固定核近似的从头算方法1,在目标阈值以上,我们采用公认的球面复光势形式2。
Major feed gases for plasma generation of F atoms are CF 4, SF 6 and NF 3. The etching process is determined by creation of F atoms through Dissociative Electron Attachment of CF 4 and by dissociation of CF 4 molecule through electronic excitation and ionization. Hence the estimation of excitation as well as ionization cross sections of e-molecule processes are required. Radicals of feed gases (CFx etc.) play important role in anisotropic etching. Also, restriction of emission of Perfluoro compunds and Global Warming Potential stimulates changes in feed gases. Therefore electron impact studies including computation of various cross sections and investigation of anion formation and resonances are major areas of interest. In this work we report various electron impact total cross sections, resonances and target properties for plasma feed gases and fluoro compounds over an extensive range of impact energies (0.1 eV - 5000 eV). Below 15 eV, we use ab-initio calculations with fixed nuclei approximation employing the molecular R-matrix method 1 and above the threshold of the target we employ the well-established Spherical Complex Optical Potential formalism 2.