采用硅技术的60 ghz片上单极天线

S. Upadhyay, S. Srivastava
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引用次数: 14

摘要

减小微波和毫米波器件的尺寸和电路集成度的需要增加了对硅基技术的需求。本文设计了一种基于硅CMOS技术的60GHz片上天线。由于单极天线具有宽带特性,因此选择单极天线进行设计。它的阻抗带宽从45GHz到70GHz。天线结构尺寸为1.953mm × 1.93mm × 0.25mm。在58.5GHz时,最小S11|为-31.56dB,在60GHz频率下,最小S11|为-27.77dB。天线的顶部金属层M6作为辐射元件,底部金属层M1作为天线的接地面生长在硅衬底和SiO2层内部。采用15 μm厚的SiO2进行隔离。在60GHz时实现-4.96dB增益,在58.5GHz时实现-4.81dB增益。在基于有限元法的电磁求解器HFSS v 15.0软件包中进行了设计仿真。
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A 60-GHz on-chip monopole antenna using silicon technology
Necessity of decreasing the size and circuit integration of microwave and millimeter wave components has increased the demand of silicon based technology. This paper presents the design of a 60GHz on-chip antenna based on silicon CMOS technology. A monopole antenna is selected for design because of its wideband characteristics. It exhibits an impedance bandwidth from 45GHz to 70GHz. The size of the proposed antenna structure is 1.953mm × 1.93mm × 0.25mm. A minimum |S11| of -31.56dB is obtained at 58.5GHz and |S11| of -27.77dB obtained at desired 60GHz frequency. A top metal layer M6 of antenna as radiating element and bottom layer M1 to work as ground plane for antenna is grown on silicon substrate and inside SiO2 layer. A 15 μm thin layer of SiO2 is used for isolation. Gain of -4.96dB is achieved at 60GHz and gain of -4.81dB is achieved at 58.5GHz. The simulation of design was done in finite element method (FEM) based electromagnetic solver HFSS v 15.0 software package.
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