像力效应对栅极-全能级肖特基势垒隧道场效应管的影响

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI:10.1109/INEC.2014.7460424

S. Hashimoto, Hiroki Kosugiyama, K. Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, K. Ohmori, Takanobu Watanabe

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引用次数: 0

摘要

我们证明了低维Si中的像力效应是高度可控的，以实现栅极全能(GAA)肖特基势垒隧穿场效应管(SB-TFET)的最佳性能。我们的有限元静电计算表明，在金属源极/漏极附近，像势降低，而在栅极绝缘体附近，像势升高。此外，在直径约为4.0nm的细Si纳米线中，像力抑制了GAA-SB-TFET的漏极诱导势垒降低(DIBL)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of image force effect on gate-all-around Schottky barrier tunnel FET

We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.

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2014 IEEE International Nanoelectronics Conference (INEC)

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