短波长发光二极管的设计

Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han
{"title":"短波长发光二极管的设计","authors":"Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han","doi":"10.1109/ICOOM.2012.6316235","DOIUrl":null,"url":null,"abstract":"We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The design of short wavelength light emitting diodes\",\"authors\":\"Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han\",\"doi\":\"10.1109/ICOOM.2012.6316235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们展示了基于algan的极短波长的多量子阱发光二极管的结构。利用APSYS软件进行仿真,可以达到280nm的波长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
The design of short wavelength light emitting diodes
We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Thermal state quantum correlation in lithium atom The influence of annealing temperature on the structural and optical properties of porous ZnO nanobelts The application study of helicopter airborne photoelectric stabilized pod in the high voltage power line inspection Process optimization the growth of GaP epitaxial layer on 2° GaAs substrate Highly sensitive Mach-Zehnder interferometer based on the dispersion response of fiber resonators
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1