边置pad和短再分配线的LPDDR5 SDRAM的低EMI特性

Jun-Bae Kim, Chang-Ki Kwon, Sangwook Park, Y. Sung, Jeong-Don Ihm, Wooyoung Kim, Jungho Jin, Sang-Jun Hwang, C. Yoo, J. Choi, Jingook Kim
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摘要

对于移动DRAM来说,对低EMI(电磁干扰)芯片架构的要求很高。因此,研究了移动DRAM中置衬垫和边置衬垫的电磁干扰特性。我们的近场扫描测量结果表明,使用边缘衬垫的LPDDR5的峰值h场大小比使用中心衬垫的LPDDR5的峰值h场大小低11.5 dB。此外,当将我们的测量结果与模拟结果进行比较时,我们发现PoP (Package-on-Package)的功率平面共振显著影响低频EMI辐射,我们也注意到峰值h场幅度趋势的合理一致性。
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A Low EMI characteristic of LPDDR5 SDRAM with Edge-placed PADs and Short Re-Distribution Lines
For mobile DRAM, low EMI (Electro-Magnetic Interference) chip architecture is highly required. So, mobile DRAM's EMI characteristic using center-placed pads and edge-placed pads has been investigated. Our near-field scan measurement results show that the peak H-field magnitude of LPDDR5 using edge-placed pads is lower by 11.5 dB than that of the other one using center-placed pads. Furthermore, when comparing our measurement results to our simulation results showing that the power plane resonance of PoP (Package-on-Package) affects low frequency EMI radiation significantly, we have also noticed reasonable agreement on the peak H-field magnitude trend.
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