一种用于脉冲形状判别的CMOS集成电路

S. Frank, M. Ericson, M. L. Simpson, D. Hutchinson, R. Todd
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引用次数: 1

摘要

研制了一种用于脉冲形状识别的CMOS集成电路(IC)。作为储存核材料监测系统的一部分,集成电路对伽马射线和中子进行辨别。该方法利用前缘触发器识别脉冲的起始点,利用过零鉴别器确定双极形状信号的过零点,提取脉冲尾部衰减时间常数。该电路设计用于连接两个光电倍增管——一个用于脉冲处理,另一个用于巧合检测。来自IC的两个输出,一个启动和停止,可以与高速定时系统一起使用,以最小的外部控制进行脉冲表征。该电路采用Orbit 1.2 /spl mu/m CMOS制造,采用5v电源供电。详细的设计包括总体拓扑,电荷敏感前置放大器和鉴别器的特性,整形方法和时间常数的选择,系统时序和实现进行了讨论。电路性能包括时序行走、系统死区时间和功耗。
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A CMOS integrated circuit for pulse-shape discrimination
A CMOS integrated circuit (IC) for pulse-shape discrimination (PSD) has been developed. The IC performs discrimination of gamma-rays and neutrons as part of a monitoring system for stored nuclear materials. The method extracts the pulse tail decay time constant using a leading edge trigger for identifying the start of the pulse and a zero-crossing discriminator to determine the zero crossing of the bipolar shaped signal. The circuit is designed to interface with two photomultiplier tubes-one for pulse processing and one for coincidence detection. Two outputs from the IC, a start and stop, can be used with a high speed timing system for pulse characterization with minimal external control. The circuit was fabricated in Orbit 1.2 /spl mu/m CMOS and operates from a 5-V supply. Specifics of the design including overall topology, charge-sensitive preamplifier and discriminator characteristics, shaping method and time constant selections, system timing, and implementation are discussed. Circuit performance is presented including timing walk, system dead time, and power consumption.
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