基于BSTO铁电薄膜的60 GHz移相器

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961637

A. Kozyrev, M. Gaǐdukov, A. Gagarin, A. Ivanov, O. Soldatenkov, A. Tumarkin, S. Razumov, N. Samoilov

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摘要

提出了两种基于BSTO薄膜的/spl sim/ 60ghz频段微波移相器的设计方案。微带移相器的性能值为F=22°/dB，连续移相可达/spl Delta//spl phi//spl ap/220°。鳍线移相器的性能值为F=32°/dB和/spl Delta//spl phi//spl ap/250°。

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60 GHz phase shifters based on BSTO ferroelectric film

Two variants of design of microwave phase shifters based on thin BSTO film for /spl sim/60 GHz frequency range are presented. Microstrip phase shifter demonstrates figure of merit F=22 deg/dB and continuous phase-shift up to /spl Delta//spl phi//spl ap/220 deg. Finline phase shifter demonstrates F=32 deg/dB and /spl Delta//spl phi//spl ap/250 deg.

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11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

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