高氧氮化隧道氧化膜的高性能鳞片型eeprom

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307402

H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, T. Takayashiki

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引用次数: 14

摘要

提出了隧道氧化物重氧化氮化(RTONO)技术，并成功应用于规模化闪存型eeprom。在很小的窗口关闭(小于6%)的情况下，获得了出色的程序和擦除(P/E)耐久性。此外，还获得了良好的市盈率。SIMS结果表明，SiO/ sub2 /中加入了大量的N原子(>10/sup 20/ atoms/cm/sup 3/)，而H原子的数量减少。因此，P/E应力几乎没有引起捕获电荷的增加。因此，该技术是提供亚微米级闪存eeprom的关键。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films

We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.<>

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1992 International Technical Digest on Electron Devices Meeting

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