{"title":"平面互连到3D互连","authors":"S. Arkalgud","doi":"10.1109/VLSI-TSA.2012.6210111","DOIUrl":null,"url":null,"abstract":"Summary form only given. Envisioning greater functionality, higher performance and lower power consumption, the semiconductor industry is introducing the first products with 3D interconnects into volume manufacturing. This presentation will trace the transition from planar to 3D interconnects by beginning with the key issues which confronted the scaling of 2D interconnects. The second part of the talk will cover the current status and the enablement of the supply chain, The final part of this presentation will discuss the potential trends for 3D IC in the future years.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Planar interconnects to 3D interconnects\",\"authors\":\"S. Arkalgud\",\"doi\":\"10.1109/VLSI-TSA.2012.6210111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Envisioning greater functionality, higher performance and lower power consumption, the semiconductor industry is introducing the first products with 3D interconnects into volume manufacturing. This presentation will trace the transition from planar to 3D interconnects by beginning with the key issues which confronted the scaling of 2D interconnects. The second part of the talk will cover the current status and the enablement of the supply chain, The final part of this presentation will discuss the potential trends for 3D IC in the future years.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210111\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

只提供摘要形式。展望更大的功能,更高的性能和更低的功耗,半导体行业正在推出第一批具有3D互连的量产产品。本演讲将从二维互连的缩放所面临的关键问题开始,追踪从平面互连到三维互连的过渡。演讲的第二部分将涵盖供应链的现状和实现,最后部分将讨论未来几年3D集成电路的潜在趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Planar interconnects to 3D interconnects
Summary form only given. Envisioning greater functionality, higher performance and lower power consumption, the semiconductor industry is introducing the first products with 3D interconnects into volume manufacturing. This presentation will trace the transition from planar to 3D interconnects by beginning with the key issues which confronted the scaling of 2D interconnects. The second part of the talk will cover the current status and the enablement of the supply chain, The final part of this presentation will discuss the potential trends for 3D IC in the future years.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
MOSFETs transitions towards fully depleted architectures Performance and variability in multi-VT FinFETs using fin doping Comparison of differential and large-signal sensing scheme for subthreshold/superthreshold FinFET SRAM considering variability A high efficient and compact charge pump with multi-pillar vertical MOSFET Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1