{"title":"采用低成本材料电沉积法制备薄膜CdS/CdTe太阳能电池","authors":"F. Álvarez, N. Di Lalla, A. Lamagna","doi":"10.1109/PVSC.1997.654127","DOIUrl":null,"url":null,"abstract":"This article describes the elaboration process of thin films for CdS/CdTe solar cells using low cost materials and a very simple process. The device structure (SnO/sub 2/:F/CdS/CdTe/Cu/Au) is deposited on coverglass substrates. The crystal structure of the films were determined by X-ray diffraction analysis. The surface morphology and microstructure of both films were subsequently characterized using a conventional scanning electron microscopy (SEM) and an atomic force microscopy (AFM). An enlargement of the grain size structure is observed after the thermal annealing. Finally, the solar cells prepared using this process exhibited a short circuit current density of J/sub sc/=18 mA/cm/sup 2/, open circuit voltage of V/sub oc/=600 mV and efficiencies above 5% under AM 1 simulated solar illumination.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Thin film CdS/CdTe solar cells prepared by electrodeposition using low cost materials\",\"authors\":\"F. Álvarez, N. Di Lalla, A. Lamagna\",\"doi\":\"10.1109/PVSC.1997.654127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article describes the elaboration process of thin films for CdS/CdTe solar cells using low cost materials and a very simple process. The device structure (SnO/sub 2/:F/CdS/CdTe/Cu/Au) is deposited on coverglass substrates. The crystal structure of the films were determined by X-ray diffraction analysis. The surface morphology and microstructure of both films were subsequently characterized using a conventional scanning electron microscopy (SEM) and an atomic force microscopy (AFM). An enlargement of the grain size structure is observed after the thermal annealing. Finally, the solar cells prepared using this process exhibited a short circuit current density of J/sub sc/=18 mA/cm/sup 2/, open circuit voltage of V/sub oc/=600 mV and efficiencies above 5% under AM 1 simulated solar illumination.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thin film CdS/CdTe solar cells prepared by electrodeposition using low cost materials
This article describes the elaboration process of thin films for CdS/CdTe solar cells using low cost materials and a very simple process. The device structure (SnO/sub 2/:F/CdS/CdTe/Cu/Au) is deposited on coverglass substrates. The crystal structure of the films were determined by X-ray diffraction analysis. The surface morphology and microstructure of both films were subsequently characterized using a conventional scanning electron microscopy (SEM) and an atomic force microscopy (AFM). An enlargement of the grain size structure is observed after the thermal annealing. Finally, the solar cells prepared using this process exhibited a short circuit current density of J/sub sc/=18 mA/cm/sup 2/, open circuit voltage of V/sub oc/=600 mV and efficiencies above 5% under AM 1 simulated solar illumination.
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