LiNbO3薄膜体声谐振器

2010 IEEE International Frequency Control Symposium Pub Date : 2010-06-01 DOI:10.1109/FREQ.2010.5556245

M. Pijolat, S. Loubriat, D. Mercier, A. Reinhardt, E. Defay, C. Deguet, M. Aid, S. Queste, S. Ballandras

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引用次数: 9

摘要

近年来，随着层转移技术的显著改进，铌酸锂(LiNbO3)成为下一代超宽带射频(RF)滤波器的候选材料。根据晶体取向的不同，LiNbO3可以实现比溅射氮化铝薄膜大6倍以上的机电耦合因子Kt2。本文提出了一种基于直接键合、研磨、抛光和深度反应离子刻蚀(DRIE)的单晶LiNbO3薄膜体声谐振器(FBAR)的制备工艺。在自制试验车上测量了45%的Kt2，证实了理论计算的预测值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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LiNbO3 Film Bulk Acoustic Resonator

As layer transfer techniques have been notably improved these passed years, lithium niobate (LiNbO3) appears as a candidate for the next generation of ultra wide band Radio Frequency (RF) filters. Depending on the crystalline orientation, LiNbO3 can achieve electromechanical coupling factors Kt2 more than 6 times larger than those of sputtered aluminium nitride films. In this paper, a process based on direct bonding, grinding, polishing and Deep Reactive Ion Etching (DRIE) is proposed to fabricate a single crystal LiNbO3 Film Bulk Acoustic Resonator (FBAR). From the fabricated test vehicles Kt2 of 45% is measured confirming the values predicted by theoretical computations.

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2010 IEEE International Frequency Control Symposium

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