用电感耦合等离子溅射系统控制无热处理In-Ga-Zn-O TFT的阈值电压

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437432

D. Matsuo, T. Ikeda, S. Kishida, Yoshitaka Setogucti, Y. Andoh, Ryoko Miyanaga, M. Fujii, Y. Uraoka

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引用次数: 0

摘要

本文表明，采用电感耦合等离子体溅射系统沉积非晶a-InGaZnO (IGZO)薄膜晶体管(TFT)时，无需热退火工艺即可控制阈值电压($V_{th}$)。采用为高密度薄膜沉积而开发的ICP溅射系统制备了可控氧浓度的两层A - igzo TFT。通过对TFT特性的评价，可以制备出$V_{th}$变化的a- igzo TFT，无需热退火工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Threshold Voltage Control of In-Ga-Zn-O TFT without Thermal Annealing Process by Inductively Coupled Plasma Sputtering System

This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ($V_{th}$) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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