D. Bilevich, A. Popov, A. Salnikov, I. Dobush, A. E. Goryainov, A. Kalentyev, D. V. Garays
{"title":"Gaas HEMT自动非线性建模技术","authors":"D. Bilevich, A. Popov, A. Salnikov, I. Dobush, A. E. Goryainov, A. Kalentyev, D. V. Garays","doi":"10.1109/DYNAMICS.2018.8601444","DOIUrl":null,"url":null,"abstract":"A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.","PeriodicalId":394567,"journal":{"name":"2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Automatic Nonlinear Modeling Technique for Gaas HEMT\",\"authors\":\"D. Bilevich, A. Popov, A. Salnikov, I. Dobush, A. E. Goryainov, A. Kalentyev, D. V. Garays\",\"doi\":\"10.1109/DYNAMICS.2018.8601444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.\",\"PeriodicalId\":394567,\"journal\":{\"name\":\"2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DYNAMICS.2018.8601444\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DYNAMICS.2018.8601444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Automatic Nonlinear Modeling Technique for Gaas HEMT
A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of nonlinear capacitances is described. A 0.15um GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multi-bias S-parameters and power characteristics.
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