基于中性点距离(DNP)的晶圆级芯片级封装(WLCSP)可靠性评估

Tung Ching Lui, B. Muthuraman
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引用次数: 6

摘要

晶圆级芯片规模封装(WLCSP)是最紧凑的封装之一,它提供良好的电气和热性能,这取决于与印刷电路板(PCB)的焊点互连的可靠性。由于集成电路(IC)制造的快速发展,当每个晶圆的芯片数量高时,每个芯片的成本就会降低。随着每个模具的io(输入/输出)数量的增加,导致模具尺寸和到中立点的距离也会增加。板级可靠性一直是WLCSP的主要关注点,特别是无底填(UF)的情况下。常见的失效机制是由于热膨胀系数(CTE)失配引起的焊点疲劳。如果增加到中性点的距离(DNP),情况会变得更糟。为了提高可靠性,有必要了解DNP的限制。本文通过热-机械有限元法(FEM)模拟分析了不同晶圆级封装结构,并通过热循环试验进行了验证。
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Relibability assessment of wafer level chip scale package (WLCSP) based on distance-to-neutral point (DNP)
Wafer Level Chip Scale Package (WLCSP) is one of the most compact packages which provide good electrical and thermal performance depending on the reliability of the solder joint interconnections to the printed circuit board (PCB). Due to rapid advancements in integrated circuit (IC) fabrication, lower cost per die is achieved when the die count per wafer is high. With the number of IOs (input/output) per die increase which induces the die size and distance to neutral point also increases. Board-level reliability is always a main concern for WLCSP especially without underfill (UF). A common failure mechanism would be solder joint fatigue due to the coefficient of thermal expansion (CTE) mismatch. This would become worse by increasing the distance-to-neutral point (DNP). To improve the reliability, understanding of DNP limitation is necessary. In this paper, different wafer level package configurations are analysed through thermo-mechanical finite element method (FEM) simulation and validated with the thermal cyclic test.
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