{"title":"ALICE像素读出升级","authors":"V. Sarritzu","doi":"10.22323/1.420.0027","DOIUrl":null,"url":null,"abstract":"The ALICE experiment at CERN is developing an upgrade of the three innermost layers of the Inner Tracking System (ITS3) to be installed during the Long Shutdown 3 of the LHC (2026–28). Based on a commercial 65 nm CMOS imaging technology for monolithic active pixel sensors, it consists of truly cylindrical wafer-scale bent stitched detectors that can be installed as close as 18 mm to the interaction point and will dramatically reduce the material budget in the region close to the interaction point to 0.05% X 0 per layer. This contribution provides an overview on the development of sensor readout for prototypes based on the 65 nm technology within the context of the ITS3 upgrade R&D, as well as an outlook on the final readout system, including requirements, plans, and current advancements.","PeriodicalId":275608,"journal":{"name":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The ALICE Pixel Readout Upgrade\",\"authors\":\"V. Sarritzu\",\"doi\":\"10.22323/1.420.0027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ALICE experiment at CERN is developing an upgrade of the three innermost layers of the Inner Tracking System (ITS3) to be installed during the Long Shutdown 3 of the LHC (2026–28). Based on a commercial 65 nm CMOS imaging technology for monolithic active pixel sensors, it consists of truly cylindrical wafer-scale bent stitched detectors that can be installed as close as 18 mm to the interaction point and will dramatically reduce the material budget in the region close to the interaction point to 0.05% X 0 per layer. This contribution provides an overview on the development of sensor readout for prototypes based on the 65 nm technology within the context of the ITS3 upgrade R&D, as well as an outlook on the final readout system, including requirements, plans, and current advancements.\",\"PeriodicalId\":275608,\"journal\":{\"name\":\"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22323/1.420.0027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.420.0027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
欧洲核子研究中心(CERN)的ALICE实验正在开发内部跟踪系统(ITS3)最内层的三层升级，将在大型强子对撞机(LHC)长期关闭期间(2026-28年)安装。基于商用65纳米CMOS成像技术的单片有源像素传感器，它由真正的圆柱形晶圆级弯曲缝合探测器组成，可以安装在距离相互作用点18毫米的地方，并将相互作用点附近区域的材料预算大幅减少到每层0.05% X 0。这篇文章概述了在ITS3升级研发的背景下，基于65纳米技术的传感器读出原型的发展，以及对最终读出系统的展望，包括需求、计划和当前进展。
The ALICE experiment at CERN is developing an upgrade of the three innermost layers of the Inner Tracking System (ITS3) to be installed during the Long Shutdown 3 of the LHC (2026–28). Based on a commercial 65 nm CMOS imaging technology for monolithic active pixel sensors, it consists of truly cylindrical wafer-scale bent stitched detectors that can be installed as close as 18 mm to the interaction point and will dramatically reduce the material budget in the region close to the interaction point to 0.05% X 0 per layer. This contribution provides an overview on the development of sensor readout for prototypes based on the 65 nm technology within the context of the ITS3 upgrade R&D, as well as an outlook on the final readout system, including requirements, plans, and current advancements.
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