M. Zubert, T. Raszkowski, A. Samson, M. Janicki, P. Zając
{"title":"DPL模型对电子器件和集成电路传热的适用范围","authors":"M. Zubert, T. Raszkowski, A. Samson, M. Janicki, P. Zając","doi":"10.1109/THERMINIC.2017.8233793","DOIUrl":null,"url":null,"abstract":"This paper presents the scope of applicability of Dual-Phase-Lag heat transfer model in electronic devices as-well-as in integrated circuits. Moreover, the investigation of necessity of use the Dual-Phase-Lag approach, instead of the classical Fourier-Kirchhoff model, to heat transfer modelling is included. In order to obtain the mentioned scope of applicability both analyzed thermal model has been used for the transistor elementary cells including the FinFET technology as-well-as power devices e.g. unipolar (MOSFET, VDMOS), bipolar and insulated gate bipolar transistors (IGBT)-SiC merged power diode. The received simulation results have been thoroughly-compared and analyzed in detail.","PeriodicalId":317847,"journal":{"name":"2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The scope of applicability of DPL model to the heat transfer in electronic devices and integrated circuits\",\"authors\":\"M. Zubert, T. Raszkowski, A. Samson, M. Janicki, P. Zając\",\"doi\":\"10.1109/THERMINIC.2017.8233793\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the scope of applicability of Dual-Phase-Lag heat transfer model in electronic devices as-well-as in integrated circuits. Moreover, the investigation of necessity of use the Dual-Phase-Lag approach, instead of the classical Fourier-Kirchhoff model, to heat transfer modelling is included. In order to obtain the mentioned scope of applicability both analyzed thermal model has been used for the transistor elementary cells including the FinFET technology as-well-as power devices e.g. unipolar (MOSFET, VDMOS), bipolar and insulated gate bipolar transistors (IGBT)-SiC merged power diode. The received simulation results have been thoroughly-compared and analyzed in detail.\",\"PeriodicalId\":317847,\"journal\":{\"name\":\"2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/THERMINIC.2017.8233793\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 23rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THERMINIC.2017.8233793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The scope of applicability of DPL model to the heat transfer in electronic devices and integrated circuits
This paper presents the scope of applicability of Dual-Phase-Lag heat transfer model in electronic devices as-well-as in integrated circuits. Moreover, the investigation of necessity of use the Dual-Phase-Lag approach, instead of the classical Fourier-Kirchhoff model, to heat transfer modelling is included. In order to obtain the mentioned scope of applicability both analyzed thermal model has been used for the transistor elementary cells including the FinFET technology as-well-as power devices e.g. unipolar (MOSFET, VDMOS), bipolar and insulated gate bipolar transistors (IGBT)-SiC merged power diode. The received simulation results have been thoroughly-compared and analyzed in detail.