J. Lammasniemi, K. Tappura, R. Jaakkola, A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa
{"title":"分子束外延生长的GaInP顶层电池和GaAs隧道二极管的串联应用","authors":"J. Lammasniemi, K. Tappura, R. Jaakkola, A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa","doi":"10.1109/PVSC.1996.563956","DOIUrl":null,"url":null,"abstract":"Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications\",\"authors\":\"J. Lammasniemi, K. Tappura, R. Jaakkola, A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa\",\"doi\":\"10.1109/PVSC.1996.563956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.563956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.563956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications
Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.
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