{"title":"采用AlGaN/GaN hemt的单片毫米波分布式放大器","authors":"R. Santhakumar, Yi Pei, U. Mishra, R. York","doi":"10.1109/MWSYM.2008.4633019","DOIUrl":null,"url":null,"abstract":"Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S21 of 5.2±1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S21 of 12±1dB from 2-32GHz. The process consists of 200nm gate-length HEMTs, CPW transmission lines, MIM capacitors and thin-film resistors. The dual-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs\",\"authors\":\"R. Santhakumar, Yi Pei, U. Mishra, R. York\",\"doi\":\"10.1109/MWSYM.2008.4633019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S21 of 5.2±1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S21 of 12±1dB from 2-32GHz. The process consists of 200nm gate-length HEMTs, CPW transmission lines, MIM capacitors and thin-film resistors. The dual-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz.\",\"PeriodicalId\":273767,\"journal\":{\"name\":\"2008 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2008.4633019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2008.4633019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic millimeter-wave distributed amplifiers using AlGaN/GaN HEMTs
Two monolithic broadband distributed amplifiers have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit cell and shows a measured S21 of 5.2±1dB from 1-50GHz. The second distributed amplifier uses dual-gate HEMTs for the unit cell and achieves a measured S21 of 12±1dB from 2-32GHz. The process consists of 200nm gate-length HEMTs, CPW transmission lines, MIM capacitors and thin-film resistors. The dual-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz.
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