Dielectric charge traps. A new structure element for power devices

The progress in SOI technologies, especially SIMOX and Silicon Direct Bonding, suggests a new type of structural element which could improve device blocking behavior in various aspects. A novel structure element for realizing high breakdown voltages in power devices is analyzed using numerical simulations. We propose dielectric structures which in strong vertical fields collect majority or minority carriers. These structures enable surprising new solutions for various problems. Improved high voltage field plates, surface field reduced Schottky rectifiers, dynamic buffers and Ron improved unipolar devices can be achieved.