{"title":"非晶Si/sub - 1-x/Ge/sub -x/ p型Si肖特基势垒红外光子探测器","authors":"R. Salazar, A. Jacome","doi":"10.1109/ICCDCS.2002.1004058","DOIUrl":null,"url":null,"abstract":"In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si/sub 1-x/Ge/sub x/:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of /spl sim/6 /spl mu/m. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd/sub 2/Si and PtSi on p-type silicon to form the Schottky barrier.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Amorphous Si/sub 1-x/Ge/sub x//p-type-Si Schottky barrier infrared photon detector\",\"authors\":\"R. Salazar, A. Jacome\",\"doi\":\"10.1109/ICCDCS.2002.1004058\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si/sub 1-x/Ge/sub x/:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of /spl sim/6 /spl mu/m. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd/sub 2/Si and PtSi on p-type silicon to form the Schottky barrier.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004058\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work a new Schottky barrier infrared detector (SBIRD) is presented. The barrier is formed by means of a layer of a-Si/sub 1-x/Ge/sub x/:H,F deposited by means of (plasma enhanced chemical vapor deposition) PECVD on p-type silicon. The barrier height of the system was estimated from I-V, I-V-T and internal photoemission measurements, and showed a value of 0.2 eV at 77 K. When the SBIRD was operated at 77 K, it showed a cut-off wavelength of /spl sim/6 /spl mu/m. The responsivity and quantum efficiency as a function of the wavelength are compared with SBIRDs which use Pd/sub 2/Si and PtSi on p-type silicon to form the Schottky barrier.
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