量子器件的挑战性问题

D. Lippens
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引用次数: 0

摘要

量子效应涉及载流子局部化、隧道效应和干涉效应。它们产生了显著的传导特性,特别是负微分电导,特殊的对称性和指向性。在本文中,两类结构更特别地涉及半导体异质结的横向或垂直传输。对于代表横向输运的电子波导,作者着重讨论了在多端口器件中通过干涉图样或对称破缺获得高指向性的必要条件。对于第二类结构,特别关注双端构型的共振隧道结构。除了寻找有效控制谐振隧道电流的方法外,作者还报告了一些优点,特别是超快速模拟应用。
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Challenging issues of quantum devices
Quantum effects concern carrier localization, tunneling and interference effects. They give rise to remarkable conduction properties notably negative differential conductance, special symmetry and directivity. In this paper, two classes of structures are more specially addressed involving either a lateral or a vertical transport in semiconductor heterojunctions. For the electron waveguides representative of a lateral transport, the author focuses on the necessary conditions for a high directivity in multi-port devices by means of interference patterns or symmetry breaking. For the second kind of structure, special attention is paid to resonant tunneling structures in a two-terminal configuration. Beyond the search for an efficient control of resonant tunneling currents, the author reports on figures of merit, notably for ultra-fast analog applications.
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