{"title":"一种用于数字GaAs应用的可变电压双向I/O衬垫","authors":"P. Sherhart, M.D. Upton, R. Lomax, R.B. Brown","doi":"10.1109/GAAS.1994.636923","DOIUrl":null,"url":null,"abstract":"A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A variable-voltage bidirectional I/O pad for digital GaAs applications\",\"authors\":\"P. Sherhart, M.D. Upton, R. Lomax, R.B. Brown\",\"doi\":\"10.1109/GAAS.1994.636923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A variable-voltage bidirectional I/O pad for digital GaAs applications
A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.
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