{"title":"带模拟预失真器的ku波段单片集成功率放大器的设计","authors":"Cai Daomin","doi":"10.1109/IEEE-IWS.2019.8804067","DOIUrl":null,"url":null,"abstract":"This work presents the design of a integrated power amplifier with a built-in analog predistorter. The amplifier is based on 0.25um GaAs pHEMT process. The power amplifier adopts a two-stage common source structure, and an analog predistorter is added between the stages to improve the linearity of the power amplifier. The analog predistorter has a simple structure, low insertion loss and high integration, which is suitable for on-chip integration. The gain of amplifier is greater than 25dB in 16-18GHz. The IMD3 can achieve a maximum improvement of 30dB near the saturation power back-off of 3dB.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Ku-band monolithic integrated power amplifier with analog predistorter\",\"authors\":\"Cai Daomin\",\"doi\":\"10.1109/IEEE-IWS.2019.8804067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the design of a integrated power amplifier with a built-in analog predistorter. The amplifier is based on 0.25um GaAs pHEMT process. The power amplifier adopts a two-stage common source structure, and an analog predistorter is added between the stages to improve the linearity of the power amplifier. The analog predistorter has a simple structure, low insertion loss and high integration, which is suitable for on-chip integration. The gain of amplifier is greater than 25dB in 16-18GHz. The IMD3 can achieve a maximum improvement of 30dB near the saturation power back-off of 3dB.\",\"PeriodicalId\":306297,\"journal\":{\"name\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2019.8804067\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2019.8804067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of Ku-band monolithic integrated power amplifier with analog predistorter
This work presents the design of a integrated power amplifier with a built-in analog predistorter. The amplifier is based on 0.25um GaAs pHEMT process. The power amplifier adopts a two-stage common source structure, and an analog predistorter is added between the stages to improve the linearity of the power amplifier. The analog predistorter has a simple structure, low insertion loss and high integration, which is suitable for on-chip integration. The gain of amplifier is greater than 25dB in 16-18GHz. The IMD3 can achieve a maximum improvement of 30dB near the saturation power back-off of 3dB.
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