势垒中si掺杂对InGaN/GaN MQW led光电性能的影响

2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI:10.1109/INOW.2008.4634535

Wang Lai, Luo Yi, Han Yanjun, Li Hongtao, Xi Guangyi, Jiang Yang, Zhao Wei

{"title":"势垒中si掺杂对InGaN/GaN MQW led光电性能的影响","authors":"Wang Lai, Luo Yi, Han Yanjun, Li Hongtao, Xi Guangyi, Jiang Yang, Zhao Wei","doi":"10.1109/INOW.2008.4634535","DOIUrl":null,"url":null,"abstract":"InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs\",\"authors\":\"Wang Lai, Luo Yi, Han Yanjun, Li Hongtao, Xi Guangyi, Jiang Yang, Zhao Wei\",\"doi\":\"10.1109/INOW.2008.4634535\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634535\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

研究了用MOCVD生长具有未掺杂和掺硅势垒的InGaN/GaN MQW led。结果表明，硅和镁掺杂物的扩散和补偿对电特性有较大影响。

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Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs

InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.

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2008 International Nano-Optoelectronics Workshop

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