一种新颖的“酷”绝缘基晶体管

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856833

M. M. De Souza, O. Spulber, E. M. Sankara Narayanan

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引用次数: 3

摘要

提出了一种新型平面冷绝缘基晶体管(IBT)。这是第一个mos控制的双极半导体器件，它融合了超级结的概念。Cool IBT的电流放大倍数为(/spl beta/+1)* Cool MOSFET电流，其中/spl beta/为固有NPN晶体管的增益。与IGBT不同，IBT和MOSFET的阴极电池可以很容易地并联在同一芯片上。因此，该器件可以在0 V的漏极电压下接通，同时保持Cool IBT的低导通电阻。

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A novel 'cool' insulated base transistor

A novel, planar, Cool Insulated Base Transistor (IBT) is presented. This is the first MOS-controlled bipolar semiconductor device, which incorporates the super junction concept. The Cool IBT has a current amplification of (/spl beta/+1)* the Cool MOSFET current, where /spl beta/ is the gain of the inherent NPN transistor. Unlike the IGBT, cathode cells of the IBT and MOSFET can be easily paralleled on the same chip. Thus, the device can be turned on at a drain voltage of 0 V, while retaining the low on-resistance of the Cool IBT.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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