采用0.18 μm CMOS技术的高LO-RF隔离的零中频次谐波混频器

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282650

H. Hsu, Tai-Hsing Lee

{"title":"采用0.18 μm CMOS技术的高LO-RF隔离的零中频次谐波混频器","authors":"H. Hsu, Tai-Hsing Lee","doi":"10.1109/EMICC.2006.282650","DOIUrl":null,"url":null,"abstract":"In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A Zero-IF Sub-Harmonic Mixer with High LO-RF Isolation using 0.18 μm CMOS Technology\",\"authors\":\"H. Hsu, Tai-Hsing Lee\",\"doi\":\"10.1109/EMICC.2006.282650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

在本研究中，作者采用0.18μm CMOS技术，在5GHz频段引入了一种具有高隔离度的零中频次谐波混频器。在AB级和混频器核心之间放置LC-tank可以提高LO和RF端口之间的隔离。LO和RF端口之间的隔离度为48 dB;在2.5V电源电压下消耗7mA，获得9.5dB转换增益

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A Zero-IF Sub-Harmonic Mixer with High LO-RF Isolation using 0.18 μm CMOS Technology

In this study, the authors introduce a zero-IF sub-harmonic mixer with high isolation in the 5GHz band using 0.18μm CMOS technology. Placing an LC-tank between the class AB stage and the mixer core improves the isolation between the LO and RF ports. The measured isolation is obtained with a 48 dB between LO and RF ports; and a 9.5dB conversion gain is acquired while consuming 7mA at 2.5V supply voltage

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2006 European Microwave Integrated Circuits Conference

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