叠加计量性能预测保真度:使目标设计周期成功的因素

Inna Tarshish-Shapir, E. Hajaj, Greg Gray, J. Hodges, Jianming Zhou, Sarah Wu, Sam Moore, G. Ben-Dov, C. Dror, Z. Lindenfeld, D. Gready, M. Ghinovker, M. Adel
{"title":"叠加计量性能预测保真度:使目标设计周期成功的因素","authors":"Inna Tarshish-Shapir, E. Hajaj, Greg Gray, J. Hodges, Jianming Zhou, Sarah Wu, Sam Moore, G. Ben-Dov, C. Dror, Z. Lindenfeld, D. Gready, M. Ghinovker, M. Adel","doi":"10.1117/12.2219181","DOIUrl":null,"url":null,"abstract":"Overlay metrology performances highly depend on the detailed design of the measured target. Hence performing simulations is an essential tool for optimizing target design. We demonstrate for scatterometry overlay (SCOL) three key factors which enable consistency in ranking between simulated and measured metrology performance for target design. The first factor, to enable high fidelity simulations for the purpose of target design, is stack and topography verification of model inputs. We report in detail the best known film metrology methods required to achieve model integrity. The second factor is the method of calculation of metrology performance metrics based on target cell reflectivities from electro-magnetic (EM) simulations. These metrics enable ranking of different designs, and subsequent choice of the best performing designs among all simulated design options, the ranking methodology being the third factor. We apply the above steps to a specific stack, where five different designs have been considered. Simulated versus measured values are compared. A good agreement between simulation and measurement is achieved.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"9778 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Overlay metrology performance prediction fidelity: the factors enabling a successful target design cycle\",\"authors\":\"Inna Tarshish-Shapir, E. Hajaj, Greg Gray, J. Hodges, Jianming Zhou, Sarah Wu, Sam Moore, G. Ben-Dov, C. Dror, Z. Lindenfeld, D. Gready, M. Ghinovker, M. Adel\",\"doi\":\"10.1117/12.2219181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Overlay metrology performances highly depend on the detailed design of the measured target. Hence performing simulations is an essential tool for optimizing target design. We demonstrate for scatterometry overlay (SCOL) three key factors which enable consistency in ranking between simulated and measured metrology performance for target design. The first factor, to enable high fidelity simulations for the purpose of target design, is stack and topography verification of model inputs. We report in detail the best known film metrology methods required to achieve model integrity. The second factor is the method of calculation of metrology performance metrics based on target cell reflectivities from electro-magnetic (EM) simulations. These metrics enable ranking of different designs, and subsequent choice of the best performing designs among all simulated design options, the ranking methodology being the third factor. We apply the above steps to a specific stack, where five different designs have been considered. Simulated versus measured values are compared. A good agreement between simulation and measurement is achieved.\",\"PeriodicalId\":193904,\"journal\":{\"name\":\"SPIE Advanced Lithography\",\"volume\":\"9778 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2219181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2219181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

叠加测量的性能在很大程度上取决于被测目标的详细设计。因此,进行仿真是优化目标设计的必要工具。我们展示了散射测量叠加(SCOL)的三个关键因素,这些因素使目标设计的模拟和测量测量性能之间的排名保持一致。第一个因素是模型输入的叠加和地形验证,以实现目标设计的高保真仿真。我们详细报告了实现模型完整性所需的最著名的薄膜计量方法。第二个因素是基于电磁仿真的目标单元反射率的计量性能指标的计算方法。这些指标可以对不同的设计进行排名,然后在所有模拟设计选项中选择表现最好的设计,排名方法是第三个因素。我们将上述步骤应用于一个特定的堆栈,其中考虑了五种不同的设计。模拟值与实测值进行了比较。仿真结果与实测结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Overlay metrology performance prediction fidelity: the factors enabling a successful target design cycle
Overlay metrology performances highly depend on the detailed design of the measured target. Hence performing simulations is an essential tool for optimizing target design. We demonstrate for scatterometry overlay (SCOL) three key factors which enable consistency in ranking between simulated and measured metrology performance for target design. The first factor, to enable high fidelity simulations for the purpose of target design, is stack and topography verification of model inputs. We report in detail the best known film metrology methods required to achieve model integrity. The second factor is the method of calculation of metrology performance metrics based on target cell reflectivities from electro-magnetic (EM) simulations. These metrics enable ranking of different designs, and subsequent choice of the best performing designs among all simulated design options, the ranking methodology being the third factor. We apply the above steps to a specific stack, where five different designs have been considered. Simulated versus measured values are compared. A good agreement between simulation and measurement is achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
SEM based overlay measurement between resist and buried patterns Contrast optimization for 0.33NA EUV lithography Analysis of wafer heating in 14nm DUV layers GPU accelerated Monte-Carlo simulation of SEM images for metrology Lensless hyperspectral spectromicroscopy with a tabletop extreme-ultraviolet source
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1