{"title":"毫米波硅晶体管和基准电路缩放到2030年ITRS地平线","authors":"S. Voinigescu, S. Shopov, P. Chevalier","doi":"10.1109/GSMM.2015.7175460","DOIUrl":null,"url":null,"abstract":"This paper reviews the technology requirements of future mm-wave systems-on-chip and the challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling towards 3nm gate length and beyond 1.5THz fMAX. Measurements of state-of-the-art MOSFETs, HBTs and cascodes are presented from DC to 325 GHz. Finally, simulations of the scaling of the SiGe HBT mm-wave benchmark circuit performance across future technology nodes predict that PAs with 45% PAE at 220 GHz, and transimpedance amplifiers with over 175GHz bandwidth and less than 3dB noise figure will become feasible by the year 2030.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Millimeter-wave silicon transistor and benchmark circuit scaling through the 2030 ITRS horizon\",\"authors\":\"S. Voinigescu, S. Shopov, P. Chevalier\",\"doi\":\"10.1109/GSMM.2015.7175460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the technology requirements of future mm-wave systems-on-chip and the challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling towards 3nm gate length and beyond 1.5THz fMAX. Measurements of state-of-the-art MOSFETs, HBTs and cascodes are presented from DC to 325 GHz. Finally, simulations of the scaling of the SiGe HBT mm-wave benchmark circuit performance across future technology nodes predict that PAs with 45% PAE at 220 GHz, and transimpedance amplifiers with over 175GHz bandwidth and less than 3dB noise figure will become feasible by the year 2030.\",\"PeriodicalId\":405509,\"journal\":{\"name\":\"Global Symposium on Millimeter-Waves (GSMM)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Global Symposium on Millimeter-Waves (GSMM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2015.7175460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Global Symposium on Millimeter-Waves (GSMM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2015.7175460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Millimeter-wave silicon transistor and benchmark circuit scaling through the 2030 ITRS horizon
This paper reviews the technology requirements of future mm-wave systems-on-chip and the challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling towards 3nm gate length and beyond 1.5THz fMAX. Measurements of state-of-the-art MOSFETs, HBTs and cascodes are presented from DC to 325 GHz. Finally, simulations of the scaling of the SiGe HBT mm-wave benchmark circuit performance across future technology nodes predict that PAs with 45% PAE at 220 GHz, and transimpedance amplifiers with over 175GHz bandwidth and less than 3dB noise figure will become feasible by the year 2030.
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