{"title":"多层VLSI技术中电迁移引起的短路与开路失效次数的关系","authors":"J. Lloyd, J. A. Knight","doi":"10.1109/IRPS.1984.362018","DOIUrl":null,"url":null,"abstract":"A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies\",\"authors\":\"J. Lloyd, J. A. Knight\",\"doi\":\"10.1109/IRPS.1984.362018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.