多层VLSI技术中电迁移引起的短路与开路失效次数的关系

J. Lloyd, J. A. Knight
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引用次数: 7

摘要

比较了Cr/Al-Cu导体条纹在高电流密度应力作用下的开路和短路电迁移寿命。以开路失效时间定义的寿命比以短路失效时间定义的寿命长得多,标准差也大得多。讨论了可靠性预测的意义。
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The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.
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