{"title":"0.5-2.6GHz硅单片宽带放大器IC","authors":"T. Nakata, S. Miyazaki, K. Shirotori","doi":"10.1109/MCS.1985.1113639","DOIUrl":null,"url":null,"abstract":"Using Si, an excellent performances, 0.5-2.6GHz bandwidth and 23dB gain, monolithic wideband amplifier IC has been developed, of which input and output impedances are matched to 50 Omega. The f/sub T/=l0GHz DNP-II manufacturing process with optimization for microwave analog ICs has been developed for this IC. And a single-ended three stages amplifier circuit with local feedback loops is adopted for this monolithic circuit.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"0.5-2.6GHz Si-Monolithic Wideband Amplifier IC\",\"authors\":\"T. Nakata, S. Miyazaki, K. Shirotori\",\"doi\":\"10.1109/MCS.1985.1113639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using Si, an excellent performances, 0.5-2.6GHz bandwidth and 23dB gain, monolithic wideband amplifier IC has been developed, of which input and output impedances are matched to 50 Omega. The f/sub T/=l0GHz DNP-II manufacturing process with optimization for microwave analog ICs has been developed for this IC. And a single-ended three stages amplifier circuit with local feedback loops is adopted for this monolithic circuit.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1985.1113639\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1985.1113639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Using Si, an excellent performances, 0.5-2.6GHz bandwidth and 23dB gain, monolithic wideband amplifier IC has been developed, of which input and output impedances are matched to 50 Omega. The f/sub T/=l0GHz DNP-II manufacturing process with optimization for microwave analog ICs has been developed for this IC. And a single-ended three stages amplifier circuit with local feedback loops is adopted for this monolithic circuit.
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