有机发光二极管的综合传导机制

Farzad Ahmadi Gooraji, M. Sharifi
{"title":"有机发光二极管的综合传导机制","authors":"Farzad Ahmadi Gooraji, M. Sharifi","doi":"10.1109/IRANIANCEE.2012.6292315","DOIUrl":null,"url":null,"abstract":"A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.","PeriodicalId":308726,"journal":{"name":"20th Iranian Conference on Electrical Engineering (ICEE2012)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comprehensive conduction regime in organic light emitting diodes\",\"authors\":\"Farzad Ahmadi Gooraji, M. Sharifi\",\"doi\":\"10.1109/IRANIANCEE.2012.6292315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.\",\"PeriodicalId\":308726,\"journal\":{\"name\":\"20th Iranian Conference on Electrical Engineering (ICEE2012)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"20th Iranian Conference on Electrical Engineering (ICEE2012)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2012.6292315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th Iranian Conference on Electrical Engineering (ICEE2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2012.6292315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种计算单层单载流子有机发光二极管I-V特性的综合模型。与以往的工作不同,该模型没有对注入限流(ILC)和空间电荷限流(SCLC)的传导状态进行任何预先假设。本文首次引入了一个定量的传导指标,该指标包含了与传导有关的所有重要因素,如偏置电压、势垒高度、载流子迁移率、器件长度和温度。此外,指数值对势垒高度和载流子迁移率进行了详细的研究。随后,证明了结果与实验数据在更大的偏差范围内非常一致,而不是之前报道的任何模型。
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A comprehensive conduction regime in organic light emitting diodes
A comprehensive model is proposed for calculating I-V characteristic in single layer single carrier organic light emitting diodes (OLEDs). Unlike previous works, the model doesn't have any pre-assumption regarding the conduction regimes of Injection Limited Current (ILC) and Space Charge Limited Current (SCLC). For the first time, a quantitative index for the conduction regime is introduced which is included all the important factors regarding the conduction regime, such as bias voltage, barrier height, carrier mobility, device length, and temperature. Furthermore, the Index value versus barrier height and carrier mobility is examined in detail. Subsequently, it is demonstrated that the results agree extremely well with experimental data in a much wider range of bias than any before reported models.
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