一个65nm 0.5 v 17 pj /帧。像素DPS CMOS图像传感器超低功耗soc实现40 db动态范围

D. Bol, G. D. Streel, F. Botman, A. K. Lusala, N. Couniot
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引用次数: 17

摘要

我们提出了一种工作在超低电压(ULV)的CMOS图像传感器,采用65纳米低功耗(LP) CMOS逻辑工艺,用于超低功耗SoC集成。17-pJ/frame的能量。采用数字像素传感器(DPS)和基于时间的读出,在0.5 V电压下实现了像素和4×4-μm像素尺寸,填充系数为57%,同时在高泄漏电流和Vt可变性下达到40 db动态范围(DR),这得益于delta复位采样(DRS)以及2晶体管(2-T)像素内比较器的门控和自适应体偏置(ABB)。
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A 65-nm 0.5-V 17-pJ/frame.pixel DPS CMOS image sensor for ultra-low-power SoCs achieving 40-dB dynamic range
We propose a CMOS image sensor operating at ultra-low voltage (ULV) in a 65-nm low-power (LP) CMOS logic process for ultra-low-power SoC integration. Energy of 17-pJ/frame.pixel and 4×4-μm pixel size with 57-% fill factor are achieved at 0.5 V with digital pixel sensor (DPS) and time-based readout while reaching 40-dB dynamic range (DR) despite high leakage currents and Vt variability, thanks to delta-reset sampling (DRS) as well as gating and adaptive body biasing (ABB) of the 2-transistor (2-T) in-pixel comparator.
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